Porous silicon as a neural electrode material
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Published on: January 25, 2019
Jörgen Persson1, Nils Danielsen, Lars Wallman
1Department of Electrical Measurements, Lund University, Lund Institute of Technology, P.O. Box 118, SE-22184 Lund, Sweden.
Abstract:
The electrical properties of the solid state/fluid (Ringer solution) interface for phosphorous- and boron-doped porous silicon are reported and the benefits of using porous silicon as neural recording electrodes are discussed. The impedance, reactance and resistance for doped porous and planar silicon, in Ringer solution, were compared to gold electrodes. Planar silicon displayed approximately a three times higher reactance than porous electrodes. The phosphorous-doped porous electrodes displayed a similar reactance compared to the gold electrodes.
