Microelectronic retinal prosthesis: II. Use of high-voltage CMOS in retinal neurostimulators

This paper presents the design, implementation, and simulated and measured results of a complementary metal-oxide-semiconductor neurostimulator implemented in a 0.35 microm high-voltage process. To allow for a high stimulation voltage, and hence the greatest versatility of the neurostimulator in situ, a high-voltage CMOS process was used. The neurostimulator utilized current sources and sinks to simultaneously deliver and recover charge. It has the ability to deliver stimulus in three output current ranges using a current sink only, current source only, or both a current source and sink combined to provide focused stimulation. The worst case integral non-linearity and differential non-linearity errors were 0.2 LSB and 0.1 LSB respectively, and the current source and sink turn-on times were under 500 ns, providing fast switching time in response to stimuli instructions. The total die area was under 13 mm2, well within the area constraints of our implantable vision prosthesis device.