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Updated: Jul 10, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Energy-dependent tunneling from few-electron dynamic quantum dots
M R Astley1, M Kataoka, C J B Ford
1Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
Abstract:
We measure the electron escape rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate equations are used to extract the tunneling rates, which change by an order of magnitude with tunnel-barrier-gate voltage. We find that the tunneling rates depend on the number of electrons in each dynamic QD because of Coulomb energy. By comparing this dependence to a saddle-point-potential model, the addition energies of the second and third electron in each dynamic QD are estimated. The scale ( approximately a few meV) is comparable to those in static QDs as expected.
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