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Related Experiment Video

Updated: Jul 10, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Energy-dependent tunneling from few-electron dynamic quantum dots.

M R Astley¹, M Kataoka, C J B Ford

¹Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom.

Physical Review Letters

|November 13, 2007

Summary

Electron escape rates from dynamic quantum dots (QDs) were measured. Tunneling rates varied significantly with gate voltage and electron number, yielding Coulomb addition energies comparable to static QDs.

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Area of Science:

Quantum physics
Condensed matter physics
Nanotechnology

Background:

Surface-acoustic-wave dynamic quantum dots (QDs) offer a tunable platform for studying quantum phenomena.
Understanding electron tunneling through barriers is crucial for quantum device applications.

Purpose of the Study:

To measure electron escape rates from dynamic QDs.
To investigate the influence of Coulomb energy on tunneling rates.
To estimate electron addition energies in dynamic QDs.

Main Methods:

Utilized rate equations to analyze electron escape.
Measured tunneling rates as a function of tunnel-barrier-gate voltage.
Employed a saddle-point-potential model for analysis.

Main Results:

Tunneling rates changed by an order of magnitude with gate voltage.
Tunneling rates showed dependence on the number of electrons due to Coulomb energy.
Electron addition energies for the second and third electrons were estimated.

Conclusions:

The estimated addition energies (a few meV) align with those found in static QDs.
Coulomb blockade effects are significant in dynamic QD systems.
This work provides insights into charge transport in dynamically confined quantum systems.