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Excited ions in intense femtosecond laser pulses: laser-induced recombination

I D Williams1, J McKenna, J Wood

  • 1Department of Physics, Queen's University Belfast, Belfast BT7 1NN, United Kingdom. i.williams@qub.ac.uk

Physical Review Letters
|November 13, 2007
PubMed

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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...