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Updated: Jul 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Graphene nanostrip digital memory device
Daniel Gunlycke1, Denis A Areshkin, Junwen Li
1Naval Research Laboratory, Washington, DC 20375, USA. daniel.gunlycke@nrl.navy.mil
Abstract:
In equilibrium, graphene nanostrips, with hydrogens sp2-bonded to carbons along their zigzag edges, are expected to exhibit a spin-polarized ground state. However, in the presence of a ballistic current, we find that there exists a voltage range over which both spin-polarized and spin-unpolarized nanostrip states are stable. These states can represent a bit in a binary memory device that could be switched through the applied bias and read by measuring the current through the nanostrip.

