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Weak localization in monolayer and bilayer graphene.

D W Horsell1, F V Tikhonenko, R V Gorbachev

  • 1School of Physics, University of Exeter, Stocker Road, Exeter, UK.

Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences
|November 21, 2007
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We found evidence of weak localization corrections to conductivity in graphene. Different scattering mechanisms in monolayer and bilayer graphene uniquely influence conductivity, revealing disorder-induced inhomogeneity.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Weak localization is a quantum interference phenomenon affecting conductivity in disordered conductors.
  • Graphene's unique electronic properties, such as Dirac cones and valley degeneracy, lead to distinct quantum transport behaviors.
  • Understanding conductivity corrections is crucial for characterizing graphene's electronic properties and potential applications.

Purpose of the Study:

  • To experimentally demonstrate and quantify weak localization corrections to conductivity in monolayer and bilayer graphene.
  • To investigate the influence of inter- and intra-valley elastic scattering on these corrections in the presence of small magnetic fields.
  • To differentiate the scattering mechanisms in monolayer versus bilayer graphene and highlight the role of disorder.

Main Methods:

  • Quantitative experimental measurements of conductivity in monolayer and bilayer graphene samples.
  • Application of small magnetic fields to probe quantum interference effects.
  • Analysis of conductivity corrections as a function of magnetic field and carrier concentration.

Main Results:

  • Experimental evidence for weak localization corrections to conductivity was observed in both systems.
  • Inter- and intra-valley elastic scattering were shown to control the correction in a manner unique to graphene.
  • A distinct difference in the correction's form was observed between monolayer and bilayer graphene.
  • The correction was observed even at zero-net carrier concentration, indicating disorder-induced inhomogeneity.

Conclusions:

  • The interplay between elastic scattering mechanisms uniquely influences weak localization corrections in graphene.
  • Monolayer and bilayer graphene exhibit distinguishable conductivity correction behaviors due to their differing scattering properties.
  • Disorder plays a significant role in graphene, inducing inhomogeneity evident even at charge neutrality.