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Efficient passively Q-switched Yb:LuAG microchip laser.

Jun Dong1, Ken-Ichi Ueda, Alexander A Kaminskii

  • 1Institute for Laser Science, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan. dong@ils.uec.ac.jp

Optics Letters
|November 21, 2007
PubMed
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This study demonstrates a novel, efficient passively Q-switched Ytterbium-doped Yttrium Aluminum Garnet (Yb:LuAG) microchip laser. It achieved high pulse energy and peak power using a Chromium-doped Yttrium Aluminum Garnet (Cr4+:YAG) saturable absorber.

Area of Science:

  • Lasers and Photonics
  • Materials Science

Background:

  • Microchip lasers offer compact and robust laser sources.
  • Passively Q-switched lasers utilize saturable absorbers to generate high-energy pulses.
  • Yb:LuAG and Cr4+:YAG are promising materials for laser applications.

Purpose of the Study:

  • To demonstrate the first passively Q-switched Yb:LuAG microchip laser.
  • To investigate the performance of Cr4+:YAG as a saturable absorber in this laser system.

Main Methods:

  • Fabrication of a Yb:LuAG microchip laser.
  • Integration of a Cr4+:YAG thin plate as a saturable absorber.
  • Characterization of laser performance including slope efficiency, pulse energy, pulse width, and repetition rate.

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Main Results:

  • Achieved slope efficiencies of 40% (T(0)=95%) and 28% (T(0)=90%).
  • Generated laser pulses with 19 microJ energy and 610 ps width at 12.8 kHz (T(0)=90%).
  • Obtained peak power exceeding 31 kW with T(0)=90%.

Conclusions:

  • The Yb:LuAG microchip laser with Cr4+:YAG is an efficient system for generating high-power, short pulses.
  • The broad emission spectra of Yb:LuAG and mode selection by Cr4+:YAG contribute to multi-mode oscillation.