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Alternate oscillations in semiconductor ring lasers.

M Sorel, P J R Laybourn, A Scirè

    Optics Letters
    |November 23, 2007
    PubMed
    Summary
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    Researchers fabricated and characterized semiconductor ring lasers, observing a switch from stable operation to oscillating modes. This phenomenon was explained using a two-mode model, with derived expressions showing good agreement with experimental data.

    Area of Science:

    • Optoelectronics
    • Semiconductor Lasers
    • Photonics

    Background:

    • Semiconductor ring lasers are crucial optoelectronic devices.
    • Understanding mode dynamics is key for laser stability and performance.

    Purpose of the Study:

    • To fabricate and characterize single-mode semiconductor ring lasers.
    • To investigate and explain the observed bifurcation in laser operation.
    • To develop a theoretical model for mode oscillations.

    Main Methods:

    • Fabrication of semiconductor ring lasers.
    • Experimental characterization of laser modes and operation.
    • Development of a two-mode theoretical model.
    • Numerical evaluation of light-intensity (L-I) curves.

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    Main Results:

    • Observation of a bifurcation from bidirectional stable operation to alternate oscillations of counterpropagating modes.
    • Derivation of analytical expressions for oscillation onset and frequency.
    • Good quantitative agreement between theoretical predictions and experimental measurements across multiple devices.

    Conclusions:

    • The two-mode model accurately explains the observed oscillation dynamics in semiconductor ring lasers.
    • The findings provide insights into controlling mode behavior for improved laser design.
    • Experimental validation confirms the theoretical framework for mode competition.