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Electric-field-induced second-harmonic generation in GaN devices.

K A Peterson, D J Kane

|November 28, 2007

Summary

Second-harmonic generation detects electric fields in Gallium Nitride (GaN) devices. This sensitive method tracks electronic waveforms with minimal photocurrent, even below the bandgap.

Area of Science:

Optoelectronics
Semiconductor Physics
Nonlinear Optics

Background:

Gallium Nitride (GaN) devices are crucial for optoelectronic applications.
Detecting electric fields in semiconductor devices requires sensitive and precise methods.
Nonlinear optical techniques offer potential for advanced characterization.

Purpose of the Study:

To investigate electric-field-induced second-harmonic generation (EFISHG) as a detection method for electric fields.
To evaluate the sensitivity and applicability of EFISHG in GaN UV Schottky photodiodes and light-emitting diodes.
To analyze the relationship between the second-harmonic signal, bias voltage, and laser power.

Main Methods:

Utilized electric-field-induced second-harmonic generation (EFISHG) in GaN devices.

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Measured the second-harmonic signal intensity.

Varied bias voltage and incident laser power to study signal dependence.

Monitored photocurrent generated during the process.

Main Results:

EFISHG successfully detected electric fields in GaN UV Schottky photodiodes and light-emitting diodes.
The technique demonstrated sensitivity to small applied voltages.
The second-harmonic signal correlated with bias voltage and laser power.
Photocurrent remained below 100 pA when frequencies were below the device bandgap.

Conclusions:

EFISHG is a viable and sensitive technique for electric field detection in GaN optoelectronic devices.
This method allows for real-time tracking of electronic waveforms.
The low photocurrent indicates minimal device perturbation, suitable for sensitive measurements.