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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
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Terahertz nonlinear optics with strained p-type quantum wells.

D S Citrin

    Optics Letters
    |November 28, 2007
    PubMed
    Summary

    Valence-subband nonparabolicity causes nonlinearities in terahertz third-harmonic generation in strained p-type quantum wells. This effect, particularly in InAs quantum wells, yields a significant third-order nonlinear susceptibility (χ(3)) for terahertz applications.

    Area of Science:

    • Condensed matter physics
    • Quantum well physics
    • Nonlinear optics

    Background:

    • Quantum wells are semiconductor structures with unique electronic properties.
    • Nonlinear optical phenomena are crucial for developing advanced photonic devices.
    • Terahertz (THz) radiation generation and manipulation are areas of active research.

    Purpose of the Study:

    • To theoretically investigate the role of valence-subband nonparabolicity in THz third-harmonic generation.
    • To determine the magnitude of the third-order nonlinear susceptibility (χ(3)) in strained p-type quantum wells.
    • To compare the nonlinear properties of quantum wells with existing mid-infrared nonlinear materials.

    Main Methods:

    • Theoretical modeling of electronic band structure in strained p-type quantum wells.

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  • Calculation of optical nonlinearities, specifically third-harmonic generation.
  • Analysis of valence-subband nonparabolicity effects on nonlinear optical coefficients.

    • Main Results:

    • Valence-subband nonparabolicity is identified as a key mechanism for THz third-harmonic generation.
    • For strained InAs quantum wells, a large χ(3) of approximately 10⁻¹² (m/V)² is predicted.
    • The calculated χ(3) values are comparable to those observed for intersubband transitions in the mid-infrared.

    Conclusions:

    • Strained p-type quantum wells exhibit significant nonlinear optical properties suitable for THz generation.
    • The theoretical framework provides a pathway for designing quantum well structures with enhanced nonlinear responses.
    • These findings suggest potential applications in novel THz sources and nonlinear optical devices.