Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)

Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Search for new phenomena with the <math></math> variable in the all-hadronic final state produced in proton-proton collisions at <math> </math> <math></math>.

The European physical journal. C, Particles and fields·2020
Same author

Search for dark matter produced in association with heavy-flavor quark pairs in proton-proton collisions at <math> </math>.

The European physical journal. C, Particles and fields·2020
Same author

Extraction and validation of a new set of CMS pythia8 tunes from underlying-event measurements.

The European physical journal. C, Particles and fields·2020
Same author

Search for Physics beyond the Standard Model in Events with Overlapping Photons and Jets.

Physical review letters·2020
Same author

Measurements of triple-differential cross sections for inclusive isolated-photon+jet events in <math></math> collisions at <math> </math>.

The European physical journal. C, Particles and fields·2019
Same author

Measurement of the average very forward energy as a function of the track multiplicity at central pseudorapidities in proton-proton collisions at <math> </math>.

The European physical journal. C, Particles and fields·2019

Related Experiment Video

Updated: Jul 9, 2026

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

Compact 3-dB tapered multimode interference coupler in silicon-on-insulator.

H Wei, J Yu, X Zhang

    Optics Letters
    |November 28, 2007
    PubMed
    Summary

    Researchers developed a compact 3-dB multimode interference coupler using a novel parabolically tapered structure. This design significantly reduces device length while maintaining high performance for integrated photonic circuits.

    More Related Videos

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    Related Experiment Videos

    Last Updated: Jul 9, 2026

    A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
    09:03

    A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

    Published on: January 7, 2019

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    Area of Science:

    • Photonics
    • Integrated Optics
    • Semiconductor Devices

    Background:

    • Multimode interference (MMI) couplers are fundamental components in integrated photonic circuits.
    • Traditional MMI couplers often require significant device lengths, limiting miniaturization.
    • Silicon-on-insulator (SOI) technology offers a platform for high-performance photonic devices.

    Purpose of the Study:

    • To design and fabricate a compact 3-dB multimode interference coupler.
    • To reduce the footprint of MMI couplers through structural innovation.
    • To achieve high performance in terms of insertion loss and uniformity.

    Main Methods:

    • Fabrication of a multimode interference coupler using a large silicon-on-insulator cross-section.
    • Implementation of a parabolically tapered structure to shorten the device length.
    • Characterization of the fabricated device for performance evaluation.

    Main Results:

    • A compact 3-dB multimode interference coupler was successfully fabricated.
    • The device length was reduced to 398 micrometers.
    • Excellent uniformity of 0.28 dB was achieved.

    Conclusions:

    • The proposed parabolically tapered structure is effective in reducing the length of 3-dB MMI couplers.
    • The fabricated device demonstrates high performance suitable for integrated photonic applications.
    • This compact design offers advantages for miniaturized photonic systems.