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Updated: Jul 9, 2026

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Toward soliton emission in asymmetric GaAs/AlGaAs multiple-quantum-well waveguide structures below the half-bandgap
Optics Letters
|December 11, 2007
Abstract:
We report what is to our knowledge the first experimental evidence of nonlinear beam displacement in a strip-loaded GaAs/AlGaAs multiple-quantum-well waveguide with an asymmetric, nonlinear cladding. An intensity-dependent spatial displacement of ~2 mum was observed for the guided mode at a wavelength of 1.55 mum. Numerical simulations that correspond to the experiment are also presented. The device has the potential of providing a soliton-emission-based, ultrafast all-optical switch.

