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5.2-5.6-microm source tunable by frequency conversion in a GaAs-based waveguide.

P Bravetti, A Fiore, V Berger

    Optics Letters
    |December 18, 2007
    PubMed
    Summary
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    Researchers developed a tunable mid-infrared (mid-IR) source using a specialized semiconductor waveguide. This device achieves tunable mid-IR generation, enabling new applications in spectroscopy and sensing.

    Area of Science:

    • Optoelectronics
    • Nonlinear Optics
    • Materials Science

    Background:

    • Semiconductor heterostructures are crucial for advanced optical devices.
    • Difference-frequency generation (DFG) is a key technique for generating tunable infrared light.
    • Efficient mid-IR sources are needed for various applications like molecular spectroscopy.

    Purpose of the Study:

    • To demonstrate a tunable mid-infrared (mid-IR) source.
    • To utilize a selectively oxidized GaAsAlAs multilayer waveguide for nonlinear frequency conversion.
    • To achieve phase matching and minimize losses for mid-IR radiation.

    Main Methods:

    • Fabrication of a selectively oxidized GaAsAlAs multilayer waveguide.
    • Implementation of difference-frequency generation (DFG) using two pump wavelengths.

    Related Experiment Videos

  • Tuning the mid-IR output by adjusting waveguide temperature and pump wavelength.
  • Measurement of output power and optical losses.

    • Main Results:

    • Achieved tunable mid-IR generation from 5.2 to 5.6 µm.
    • Obtained a maximum mid-IR output power of 0.12 µW for a pump power product of 7 mW².
    • Measured optical losses of approximately 50 cm⁻¹ for the mid-IR radiation.
    • Attributed observed losses to surface scattering effects.

    Conclusions:

    • A tunable mid-IR source was successfully demonstrated using a GaAsAlAs multilayer waveguide.
    • The waveguide design enables phase matching for nonlinear optical interactions.
    • Further optimization is needed to reduce scattering losses and enhance output power.