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Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
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Semiconductor-doped-silica saturable-absorber films for solid-state laser mode locking.

I P Bilinsky, J G Fujimoto, J N Walpole

    Optics Letters
    |December 20, 2007
    PubMed
    Summary

    Researchers developed new semiconductor-doped films for solid-state laser mode locking. These thin films enable ultrashort pulse generation, advancing laser technology.

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    Area of Science:

    • Materials Science
    • Optics and Photonics
    • Laser Physics

    Background:

    • Saturable absorbers are crucial for initiating and stabilizing ultrashort pulse generation in lasers.
    • Traditional saturable absorbers often face limitations in tunability and performance.
    • Semiconductor-doped materials offer potential for novel saturable absorber applications due to their unique optical properties.

    Purpose of the Study:

    • To introduce a novel saturable-absorber materials system for solid-state laser mode locking.
    • To demonstrate the fabrication and characterization of thin, nonepitaxially grown, semiconductor-doped films.
    • To investigate the tunability of optical properties through fabrication and annealing processes.

    Main Methods:

    • Fabrication of thin films of Indium Arsenide (InAs) semiconductor microcrystallites embedded in silica using radio frequency (rf) sputtering.
    • Control of linear absorption by adjusting film thickness.
    • Adjustment of nonlinear absorption saturation cross-section and recovery time via rapid thermal annealing.
    • Demonstration of Kerr-lens mode locking initiation in a Titanium-doped Aluminum Oxide (Ti:Al2O3) laser using 30-nm-thick InAs-doped silica films on sapphire.

    Main Results:

    • Successful fabrication of InAs-doped silica thin films with controllable linear absorption.
    • Demonstrated tunability of nonlinear absorption saturation cross-section and recovery time through rapid thermal annealing.
    • Achieved initiation of Kerr-lens mode locking in a Ti:Al2O3 laser.
    • Generated ultrashort laser pulses with durations as short as 25 femtoseconds (fs).
    • Observed a wavelength tuning range from 800 to 880 nm.

    Conclusions:

    • Thin, nonepitaxially grown, semiconductor-doped films represent a viable and effective saturable-absorber system for solid-state laser mode locking.
    • The developed material system offers adjustable optical properties, enabling tailored performance for specific laser applications.
    • The demonstrated ability to generate 25 fs pulses highlights the potential of this approach for advancing ultrashort pulse laser technology.