Related Experiment Video
Updated: Jul 8, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4 laser at 1.5-1.6 microm
A A Lagatsky1, V E Kisel, A E Troshin
1School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, UK. aal2@st-andrews.ac.uk
Abstract:
We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er(3+) and Yb(3+) codoped YAl(3)(BO(3))(4) laser operating in the 1.5-1.6 microm spectral region. Low-loss GaInNAs quantum-well semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps.

