Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

Difference from Background: Limit of Detection

Difference from Background: Limit of Detection

The limit of detection (LOD) is the smallest amount of analyte that can be distinguished from the background noise. The LOD value corresponds to the concentration at which the analyte signal is three times larger than the standard deviation of the blank signal. Below this value, the analyte signal cannot be differentiated from the background noise. It is calculated by dividing the calibration slope by 3 times the standard deviation of the blank signals.
The LOD indicates the presence or absence...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

High-Performance Liquid Chromatography: Types of Detectors

High-Performance Liquid Chromatography: Types of Detectors

The role of the detectors in High-Performance Liquid Chromatography (HPLC) is to analyze the solutes as they exit from the chromatographic column. The detector recognizes the solute's property and generates corresponding electrical signals, which are converted into a readable graph of the detector's response versus elution time called a chromatogram at the computer. There are several types of HPLC detectors, each with its own advantages and limitations, depending on the analyte properties and...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Interactive effects between water temperature, microparticle compositions, and fiber types on the marine keystone species Americamysis bahia.

Environmental pollution (Barking, Essex : 1987)·2024

Same author

Integrative phylogenetic, phylogeographic and morphological characterisation of the Unio crassus species complex reveals cryptic diversity with important conservation implications.

Molecular phylogenetics and evolution·2024

Same author

Dietary exposure to four sizes of spherical polystyrene, polylactide and silica nanoparticles does not affect mortality, behaviour, feeding and energy assimilation of Gammarus roeseli.

Ecotoxicology and environmental safety·2022

Same author

Impact of catchment land use on fish community composition in the headwater areas of Elbe, Danube and Main.

The Science of the total environment·2018

Same author

Comparison of nine different methods to assess fish communities in lentic flood-plain habitats.

Journal of fish biology·2017

Same author

Synergistic impacts by an invasive amphipod and an invasive fish explain native gammarid extinction.

BMC ecology·2016

Search research articles

Related Experiment Video

Updated: Jul 8, 2026

Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle

Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle

Published on: January 3, 2016

Silicon detector nonlinearity and related effects.

A R Schaefer¹, E F Zalewski, J Geist

¹U.S. National Bureau of Standards, Center for Radiation Research, Radiometric Physics Division, Washington, DC 20234, USA.

|April 15, 1983

Summary

Silicon photodiodes exhibit red spectral region nonlinearity, explained by spatial response nonuniformity. This study details the cause, experimental evidence, and practical implications for diode usage.

More Related Videos

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Related Experiment Videos

Last Updated: Jul 8, 2026

Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle

Measurement of Scattering Nonlinearities from a Single Plasmonic Nanoparticle

Published on: January 3, 2016

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Area of Science:

Optoelectronics
Semiconductor Physics

Background:

Silicon photodiodes are crucial optoelectronic devices.
Nonlinearity in their response can affect measurement accuracy.

Purpose of the Study:

To explain the observed nonlinearity in the red spectral region of silicon photodiode response.
To correlate this nonlinearity with spatial response nonuniformity.

Main Methods:

Experimental investigation of silicon photodiode response.
Analysis of spectral characteristics and spatial uniformity.

Main Results:

A clear explanation for red spectral region nonlinearity was established.
Nonlinearity was directly correlated with spatial nonuniformity of the photodiode response.
Experimental data supported the proposed explanation.

Conclusions:

Spatial nonuniformity is the primary cause of red spectral nonlinearity in silicon photodiodes.
Understanding this phenomenon is critical for accurate photodiode applications.
Precautions for using these diodes are provided based on the findings.