Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

High-speed retardation modulation ellipsometer.

A Moritani1, Y Okuda, H Kubo

  • 1Osaka University, Department of Electronic Engineering, Suita, Osaka 565, Japan.

Applied Optics
|August 15, 1983
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Design of tangential viewing phase contrast imaging for turbulence measurements in JT-60SA.

The Review of scientific instruments·2016
Same author

HDlive imaging of meconium peritonitis.

Ultrasound in obstetrics & gynecology : the official journal of the International Society of Ultrasound in Obstetrics and Gynecology·2015
Same author

Measurement of the inclusive electron neutrino charged current cross section on carbon with the T2K near detector.

Physical review letters·2014
Same author

Black hole physics. Black hole lightning due to particle acceleration at subhorizon scales.

Science (New York, N.Y.)·2014
Same author

Note: Magnification of a polarization angle with a Littrow layout brazed grating.

The Review of scientific instruments·2014
Same author

Precise measurement of the neutrino mixing parameter θ23 from muon neutrino disappearance in an off-axis beam.

Physical review letters·2014
Same journal

Multifunctional reconfigurable terahertz metasurface based on vanadium dioxide phase transition: achieving broadband absorption and efficient polarization conversion.

Applied optics·2026
Same journal

High-Q-factor electromagnetically induced transparency utilizing quasi-bound states in the continuum in an all-dielectric terahertz metasurface.

Applied optics·2026
Same journal

Automated stitching interferometry for high-precision metrology of X-ray mirrors.

Applied optics·2026
Same journal

Experimental demonstration of an approach to designing a metal-dielectric DBR resonant cavity structure.

Applied optics·2026
Same journal

High-precision wavefront reconstruction from a single-shot interferogram using a physics-driven hybrid feature calibration network.

Applied optics·2026
Same journal

Ultra-high-Q Fano resonance based on coupled topological corner states in Kagome photonic crystals.

Applied optics·2026
See all related articles

A new high-speed retardation modulation ellipsometer enables rapid data acquisition for precise optical measurements. This advanced instrument is ideal for studying dynamic processes like anodic film growth on semiconductors.

Area of Science:

  • Materials Science
  • Optical Physics
  • Surface Science

Background:

  • Ellipsometry is a powerful technique for characterizing thin films and surfaces.
  • Traditional ellipsometers can be limited by slow data acquisition speeds, hindering the study of dynamic processes.
  • High-speed optical measurements are crucial for understanding rapid material transformations.

Purpose of the Study:

  • To describe the construction and performance of a novel high-speed retardation modulation ellipsometer.
  • To demonstrate the ellipsometer's capability for rapid data acquisition and precise optical measurements.
  • To showcase its application in studying dynamic surface phenomena.

Main Methods:

  • Utilized an Ammonium Dihydrogen Phosphate (ADP) four-crystal electro-optic modulator for retardation modulation.

Related Experiment Videos

  • Employed a high-speed digitizer for simultaneous detection of transmitted light intensity and modulation voltage.
  • Developed a system capable of acquiring (Psi, Delta) data points in 4 microseconds, with rapid repetition rates.
  • Main Results:

    • Achieved data acquisition for a single (Psi, Delta) data point in just 4 microseconds.
    • Demonstrated high precision with an average root-mean-square error of 0.05 degrees in Psi and 0.15 degrees in Delta using a BaK1 glass standard.
    • Successfully applied the ellipsometer to monitor the rapid growth of anodic films on a Gallium Arsenide (GaAs) semiconductor wafer.

    Conclusions:

    • The developed high-speed retardation modulation ellipsometer offers significant advancements in temporal resolution for ellipsometric measurements.
    • The instrument's precision and speed make it suitable for in-situ monitoring of fast surface and film growth processes.
    • This technology opens new avenues for studying dynamic material behavior in real-time.