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High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm
J-M Hopkins1, N Hempler, B Rösener
1Institute of Photonics, SUPA, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow, G4 0NW, UK. johnmark.hopkins@strath.ac.uk
Optics Letters
|January 17, 2008
Abstract:
We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 microm. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.
