In situ photoemission study of Pr1-xCaxMnO3 epitaxial thin films with suppressed charge fluctuations

We have performed an in situ photoemission study of Pr1-xCaxMnO3 (PCMO) thin films grown on LaAlO3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with doping, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a doping-induced energy shift toward the Fermi level (EF) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at EF was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.