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Updated: Jul 7, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

B G Park1, T Banerjee, J C Lodder

  • 1MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands.

Physical Review Letters
|February 1, 2008
PubMed

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