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Related Experiment Video

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

Domain switching kinetics in disordered ferroelectric thin films.

J Y Jo¹, H S Han, J-G Yoon

¹ReCOE&FPRD, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

Physical Review Letters

|February 1, 2008

Summary

We studied ferroelectric domain kinetics in lead zirconate titanate films. A Lorentzian distribution of domain switching times, influenced by local field variations from defects, explains their behavior in ferroelectric memories.

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Area of Science:

Materials Science
Condensed Matter Physics
Solid-State Chemistry

Background:

Lead zirconate titanate (Pb(Zr,Ti)O3) films are crucial for ferroelectric memory devices.
Understanding their domain kinetics is essential for device performance and reliability.

Purpose of the Study:

To investigate the domain kinetics of (111)-preferred polycrystalline Pb(Zr,Ti)O3 films.
To elucidate the factors governing polarization switching behaviors under varying conditions.

Main Methods:

Measurement of polarization switching behaviors in Pb(Zr,Ti)O3 films.
Analysis of switching dynamics across a range of electric fields and temperatures.
Modeling domain switching using a Lorentzian distribution of logarithmic times.

Main Results:

Switching behaviors were successfully modeled using a Lorentzian distribution of logarithmic domain-switching times.
This distribution effectively explains the observed polarization switching dynamics.
Local field variations arising from dipole defects at pinning sites were identified as a potential cause.

Conclusions:

The study provides a kinetic model for domain switching in ferroelectric films.
Dipole defects and local field variations play a significant role in domain pinning and switching dynamics.
The findings contribute to the understanding and design of advanced ferroelectric memory materials.