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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
J J Dong1, B Schmittmann, R K P Zia
1Center for Stochastic Processes in Science and Engineering, Department of Physics, Virginia Tech, Blacksburg, Virginia 24061-0435, USA. jjdong@vt.edu
Local defects in particle transport systems significantly alter flow. Simulations show particle size and defect location critically impact steady-state currents and density profiles.
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