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Updated: Jul 7, 2026
08:23
Finite Element Modelling of a Cellular Electric Microenvironment
Published on: May 18, 2021
A pulse-based, parallel-element macromodel for ferroelectric capacitors
A Sheikholeslami1, P G Gulak, H Takauchi
1Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3G4. ali@eecg.toronto.edu
Summary
A new pulse-based model for ferroelectric memory was developed and tested. This model accurately predicts bitline voltage, advancing memory simulation accuracy.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Engineering
Background:
- Ferroelectric materials are crucial for non-volatile memory devices.
- Accurate behavioral modeling is essential for simulating ferroelectric memory performance.
- Existing models may not fully capture dynamic pulse behavior.
Purpose of the Study:
- To propose and implement a novel pulse-based behavioral model for ferroelectric memory.
- To validate the model's accuracy using experimental data.
- To enhance the simulation capabilities for ferroelectric memory testchips.
Main Methods:
- Developed a pulse-based behavioral model.
- Implemented the model in HSPICE simulation software.
- Extracted model parameters using hysteresis-loop and pulse measurement data.
Main Results:
- The proposed model accurately predicts bitline voltage.
- Experimental validation confirmed the model's predictive power.
- The model effectively captures the dynamic response of ferroelectric memory.
Conclusions:
- The pulse-based behavioral model offers a significant improvement in ferroelectric memory simulation.
- This model can be used for accurate prediction of device behavior in testchips.
- Further research can explore its application in complex memory designs.
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