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Updated: Jul 7, 2026

Finite Element Modelling of a Cellular Electric Microenvironment

Finite Element Modelling of a Cellular Electric Microenvironment

Published on: May 18, 2021

A pulse-based, parallel-element macromodel for ferroelectric capacitors.

A Sheikholeslami¹, P G Gulak, H Takauchi

¹Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3G4. ali@eecg.toronto.edu

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

|February 2, 2008

Summary

This summary is machine-generated.

A new pulse-based model for ferroelectric memory was developed and tested. This model accurately predicts bitline voltage, advancing memory simulation accuracy.

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Area of Science:

Materials Science
Electrical Engineering
Computer Engineering

Background:

Ferroelectric materials are crucial for non-volatile memory devices.
Accurate behavioral modeling is essential for simulating ferroelectric memory performance.
Existing models may not fully capture dynamic pulse behavior.

Purpose of the Study:

To propose and implement a novel pulse-based behavioral model for ferroelectric memory.
To validate the model's accuracy using experimental data.
To enhance the simulation capabilities for ferroelectric memory testchips.

Main Methods:

Developed a pulse-based behavioral model.
Implemented the model in HSPICE simulation software.
Extracted model parameters using hysteresis-loop and pulse measurement data.

Main Results:

The proposed model accurately predicts bitline voltage.
Experimental validation confirmed the model's predictive power.
The model effectively captures the dynamic response of ferroelectric memory.

Conclusions:

The pulse-based behavioral model offers a significant improvement in ferroelectric memory simulation.
This model can be used for accurate prediction of device behavior in testchips.
Further research can explore its application in complex memory designs.