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A study of vacancy-related defects in (Pb,La)(Zr,Ti)O(3) thin films using positron annihilation
T Friessnegg1, S Aggarwal, B Nielsen
1Maryland Univ., College Park, MD, USA.
Abstract:
The formation of vacancy-type defects in La-doped lead zirconate titanate (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10(-5) Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes.
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