Related Experiment Video
Updated: Jul 7, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
First-principles investigation of the asymmetric contact effect on current-voltage characteristics of a molecular
1School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410076, The People's Republic of China. cscuzzh@163.com
Abstract:
The properties of electronic transport in an electronic device composed of a spatially symmetric phenyldithiolate molecule sandwiched between two gold electrodes with asymmetric contact are investigated by the first-principles study. It is found that the I-V and G-V characteristics of a device show significant asymmetry and the magnitudes of current and conductance depend remarkably on the variation of molecule-metal distance at one of the two contacts. Namely, an asymmetric contact would lead to the weak rectifying effects on the current-voltage characteristics of a molecular device. We also calculate self-consistently other microscopic quantities such as the local density of states, the total density of states, and the distribution of charges in the asymmetric molecular models under the applied bias. The results show that the highest-occupied molecular orbital (HOMO) is responsible for the resonant tunneling and the shifting of the HOMO due to the charging of the device under the bias voltage is the intrinsic origin of asymmetric I(G)-V characteristics.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Debye–Huckel–Onsager Conductance Equation
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Characteristics of JFET
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...

