Planar, Al0.3Ga0.7As-passivated-base, heterojunction bipolar phototransistors

New planar GaAs heterojunction bipolar phototransistors have been designed and demonstrated. The devices use a GaAs/Al(0.3)Ga(0.7) As molecular-beam-epitaxy materials system with an Al(0.3)Ga(0.7) As passivated, 10-nm-thick base; a depleted, high-low emitter; and a low emitter-base capacitance. Electrical contact to the emitter is made by a set of parallel, ohmic fingers and to the collector by an ohmic contact formed in a large, approximately 1.48-microm deep via. Rise times in response to impulse optical excitation at 810 nm were 747-891 ps except at the two lowest optical excitation powers measured. Photocurrent gains measured at 810 and 850 nm were 0.67-19, depending on experimental conditions. These devices are promising for use in heterodyne photodetector arrays for coherent optical processing channelizers requiring a 100-MHz bandwidth.