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Computer processing of electron microscope cross sections of multilayer mirrors.

M O Flaissier, C Guichet, M Rasigni

|February 9, 2008

Summary

A new method uses computer processing of electron micrographs to analyze interface profiles in extreme ultraviolet (EUV) layered synthetic microstructures (LSMs). This improves understanding of structural behavior and EUV optical properties.

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Area of Science:

Materials Science
Nanotechnology
Optics

Background:

Layered Synthetic Microstructures (LSMs) are crucial for extreme ultraviolet (EUV) applications.
Accurate characterization of interfaces in LSMs is essential for understanding their performance.
Existing methods may not fully capture the detailed interface profiles relevant to EUV optics.

Purpose of the Study:

To develop and validate a novel method for determining interface profiles of EUV-LSMs.
To quantitatively characterize interfacial roughness using statistical parameters.
To enhance the understanding of structural behavior and EUV optical properties of multilayer stacks.

Main Methods:

Computer processing of digitized LSM electron micrographs.
Application of the developed method to a tungsten/carbon multilayer sample.
Characterization of interfacial roughness using root mean square (rms) roughness height and autocorrelation length (sigma).

Main Results:

Successfully determined interface profiles of the tungsten/carbon multilayer.
Quantified interfacial roughness parameters (rms height and autocorrelation length).
Demonstrated the utility of the method for detailed structural analysis.

Conclusions:

The developed computer-based method provides accurate interface profile determination for EUV-LSMs.
Quantitative roughness parameters offer insights into interfacial characteristics.
Improved understanding of interface profiles will lead to better design and performance of EUV optical components.