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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Capacitors play a crucial role in car radios, where they filter and store frequencies to ensure clear signal reception. Essentially serving as energy storage devices, capacitors store energy within their electric field and are composed of two parallel conducting plates separated by a dielectric.
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Design Example: Capacitance Multiplier Circuit01:20

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In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
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Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...

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Switched-capacitor neuromorphs with wide-range variable dynamics.

J G Elias1, D M Northmore

  • 1Dept. of Electr. Eng., Delaware Univ., Newark, DE.

IEEE Transactions on Neural Networks
|January 1, 1995
PubMed
Summary

Switched capacitors enable artificial dendritic trees (ADTs) to mimic biological neurons. These silicon neuro-morphs offer tunable, long-lasting impulse responses, crucial for advanced neuromorphic computing.

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Area of Science:

  • Neuroscience
  • Electrical Engineering
  • Materials Science

Background:

  • Artificial dendritic trees (ADTs) are computational models inspired by biological neurons.
  • Developing adaptable and programmable resistive elements for ADTs is essential for advanced neuromorphic systems.
  • Existing resistive elements often lack the wide dynamic range and tunability required for complex neural simulations.

Purpose of the Study:

  • To describe the use of switched capacitors as programmable resistive elements in ADTs.
  • To demonstrate the capability of silicon neuro-morphs with ADTs to generate prolonged and tunable impulse responses.
  • To investigate the programmable resistance range and dynamic response characteristics of these novel ADT configurations.

Main Methods:

  • Implementation of switched capacitors as resistive elements within spatially extensive artificial dendritic trees.
  • Fabrication of silicon neuro-morphs incorporating these ADT structures.
  • Experimental characterization of impulse response duration, shape tunability, and frequency selectivity.

Main Results:

  • Demonstrated impulse responses lasting millions of times longer than the initiating impulse.
  • Achieved wide-range tunability of dynamical responses in both shape and duration.
  • Established an indirect programmable resistance range for switched-capacitor resistors between 500 KΩ and 1000 GΩ.
  • Observed variable impulse response functions, tunable frequency selectivity, and rate-invariance in spatiotemporal pattern responses.

Conclusions:

  • Switched capacitors serve as effective wide-range, programmable resistive elements for artificial dendritic trees.
  • Silicon neuro-morphs utilizing these ADTs exhibit remarkable long-duration and tunable impulse responses.
  • The developed technology offers significant potential for creating more sophisticated and adaptable neuromorphic computing systems.