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Modeling of scattering and depolarizing electro-optic devices. II. Device simulation.
P E Shames1, P C Sun, Y Fainman
1Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, USA.
This study presents a straightforward method for simulating electro-optic devices, accurately predicting performance by accounting for light scattering and depolarization. The computer models closely matched experimental results for fabricated devices.
Area of Science:
- Optoelectronics
- Computational Physics
- Materials Science
Background:
- Accurate modeling of electro-optic (EO) devices is crucial for their design and optimization.
- Existing models may not fully capture complex optical phenomena like scattering and depolarization in arbitrary geometries.
Purpose of the Study:
- To develop and validate a simple yet accurate computer simulation method for arbitrary-geometry electro-optic devices.
- To incorporate material electro-optic properties, including refractive index changes, scattering, and depolarization, into the simulation model.
Main Methods:
- Utilized finite-element analysis to compute electrostatic field distributions for EO device designs.
- Modeled light intensity attenuation due to scattering as an exponential function.
- Quantified depolarized light intensity as a function of scattering intensity.
- Calculated total optical transmittance by integrating optical values across all simulation elements.
Main Results:
- Developed a material electro-optic model encompassing scattering and depolarization effects.
- Successfully simulated lanthanum-modified lead zirconate titanate-based surface-electrode and transverse-electrode EO devices.
- Experimental performance of fabricated devices showed excellent agreement with simulation results.
Conclusions:
- The proposed computer simulation method provides accurate predictions for electro-optic device performance.
- The model effectively accounts for key optical phenomena, enabling reliable design and analysis of complex EO devices.
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