Related Experiment Video
Updated: Jul 7, 2026

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
Diffusion properties of point defects in barium strontium titanate thin films
Kentaro Morito1, Toshimasa Suzuki, Hiroshi Kishi
1Taiyo Yuden Company Ltd., Takasaki, Gunma, Japan. kmorito@jty.yuden.co.jp
Abstract:
The relationship between the diffusion behavior of hydrogen and the electrical properties of (Ba, Sr)TiO3 (BST) thin-film capacitors was investigated using thermal desorption spectroscopy and secondary ion mass spectroscopy analyses. It has been clearly shown that the frequency dependence of the complex impedance profile of the BST thin-film capacitors could be successfully represented by two parallel resistor-capacitor (RC) electrical equivalent networks in series correlated with the distribution of the hydrogen, namely, the Pt/BST interface region with the influence of hydrogen and the BST bulk region without the influence of hydrogen. However, the I-V properties of the BST thin-film capacitors could be determined almost from the hydrogen atoms existing at the Pt/BST interface.
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects

