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Updated: Jul 7, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Intraband carrier photoexcitation in quantum dot lasers
P Moreno1, M Richard, M Rossetti
1Ecole Polytechnique Fédérale de Lausanne, Institute of Quantum Electronics and Photonics, Switzerland. pablo.moreno@epfl.ch
Abstract:
We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (QD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements. We provide a theoretical support to the experimental data and highlight the important role of this process in the laser characteristics.
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