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High Q metal strip SSBW resonators using a SAW design.

I D Avramov1

  • 1Inst. of Solid State Phys., Sofia.

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
|January 1, 1990
PubMed
Summary

High Q low-loss surface skimming bulk wave (SSBW) resonators were achieved using a surface acoustic wave (SAW) design. Optimized parameters and frequency trimming offer superior performance for SSBW devices.

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Gigahertz range resonant devices for oscillator applications using shear horizontal acoustic waves.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·1993
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A surface transverse wave-based MSK system.

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Area of Science:

  • Acoustic physics
  • Materials science
  • Electrical engineering

Background:

  • Surface acoustic wave (SAW) resonators are widely used in electronic devices.
  • Surface skimming bulk wave (SSBW) resonators offer potential advantages but require optimization.

Purpose of the Study:

  • To experimentally investigate and compare the characteristics of SSBW and SAW resonators.
  • To identify optimal design parameters for high-performance SSBW resonators.

Main Methods:

  • Fabrication of SSBW and SAW resonators using identical photolithographic masks.
  • Systematic variation of interdigital transducer distance (L), metal thickness (h/lambda), and finger-to-gap ratio.
  • Performance characterization including unloaded Q factor and insertion loss.

Main Results:

  • SSBW resonators achieved high unloaded Q (5820) and low insertion loss (7.8 dB) at 766 MHz.
  • Optimal SSBW performance was obtained at L=nλ/2-λ/4, h/λ=1.6%, and finger-to-gap ratio near 1.
  • SSBW resonant frequency exhibited higher sensitivity to metal thickness, addressable by CF(4) plasma etching.

Conclusions:

  • Optimized SSBW resonators fabricated with a SAW design demonstrate excellent performance.
  • Frequency trimming via plasma etching effectively compensates for metal thickness variations in SSBW devices.
  • SSBW resonators show promise for advanced electronic applications requiring high Q and low loss.

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