Thin-film ferroelectrics of PZT of sol-gel processing

The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4x10(6) V/m and 0.36 C/m(2). The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.