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The four-frequency process for coupled-duals using error-corrected S-parameter measurements.

G E Roberts1

  • 1Gen. Electr. Mobile Commun. Bus. Div., Lynchburg, VA.

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
|January 1, 1988
PubMed
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A new twelve-term error model corrects discrepancies in four-frequency crystal measurements. This enhanced method improves accuracy for coupled dual crystal analysis, crucial for electronic filter design.

Area of Science:

  • Electrical Engineering
  • Materials Science
  • Physics

Background:

  • The four-frequency measurement process is vital for characterizing coupled dual crystals.
  • Previous applications were successful up to 21.4 MHz.
  • Discrepancies at higher frequencies (45 MHz, 57.5 MHz) indicated measurement system errors.

Purpose of the Study:

  • To identify and eliminate errors in the four-frequency measurement system.
  • To enhance the accuracy of coupled dual crystal parameter extraction.
  • To enable reliable measurements at higher frequencies.

Main Methods:

  • A twelve-term error model was developed and its equations derived.
  • The model was implemented using an automatic network analyzer.
  • Four critical frequencies were calculated from impedance zeros (short-circuit and open-circuit).

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Main Results:

  • The twelve-term error model successfully corrected discrepancies in crystal data.
  • Error-corrected S-parameters enabled accurate determination of four key frequencies.
  • Analysis of an external capacitor optimized frequency distribution.

Conclusions:

  • The developed error model significantly improves the accuracy of the four-frequency measurement process.
  • This methodology is essential for precise characterization of coupled dual crystals.
  • The findings are critical for advancing the design and performance of electronic filters.