Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
The Electrical Double Layer01:30

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Corrigendum to "Nitrogen source and availability associate to mitochondrial respiratory pathways and symbiotic function in lotus japonicus" [J. Plant Physiol. 2025 (314), November 2025, 154606].

Journal of plant physiology·2025
Same author

Interpretable machine learning unveils key predictors and default values in an expanded database of human in vitro dermal absorption studies with pesticides.

Regulatory toxicology and pharmacology : RTP·2025
Same author

Implantation of a novel insertable cardiac monitor: preliminary multicenter experience in Europe.

Journal of interventional cardiac electrophysiology : an international journal of arrhythmias and pacing·2024
Same author

Direct Measurement of the Cosmic-Ray Carbon and Oxygen Spectra from 10  GeV/n to 2.2  TeV/n with the Calorimetric Electron Telescope on the International Space Station.

Physical review letters·2021
Same author

[Trunk kinematics during walking in stroke patients: A systematic review].

Rehabilitacion·2020
Same author

Cryptococcal Immune Reconstitution Inflammatory Syndrome: An Unusual Presentation on the Tongue.

Actas dermo-sifiliograficas·2020
Same journal

Theoretical Foundations of the Echo Envelope Statistical Modeling: A Tutorial.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2025
Same journal

Practical Demonstrations of FR3-Band Thin-Film Lithium Niobate Acoustic Filter Design.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2025
Same journal

Real-Time Heterogeneous Helical Wave Spectrum Method for Transabdominal Passive Acoustic Mapping.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2025
Same journal

Cascaded Plane Wave Ultrasound Velocity Vector Imaging: In Vivo Feasibility in Carotid Arteries.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2025
Same journal

Quantitative Acoustic Attenuation Scanning Using a Phase-Insensitive Ultrasound Computed Tomography System.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2025
Same journal

FPGA-Accelerated CNN Reconstruction for Low-Power Sparse-Array Ultrasound Imaging.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2025
See all related articles

Related Experiment Video

Updated: Jul 7, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Acoustoelectric interaction in layered semiconductor

F Palma, P K Das

    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
    |January 1, 1987
    PubMed
    Summary

    No abstract available in PubMed .

    More Related Videos

    Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
    11:34

    Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

    Published on: October 6, 2020

    Related Experiment Videos

    Last Updated: Jul 7, 2026

    Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
    08:12

    Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

    Published on: December 5, 2015

    Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
    11:34

    Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

    Published on: October 6, 2020