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Annealing to reduce scattering centers in Czochralski-grown beta-BaB2O4
1Functional Materials Research Laboratories, NEC Corporation, 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan. kouta@fml.cl.nec.co.jp
Abstract:
When a visible laser beam passes through beta-BaB(2)O(4) (BBO), scattered light can be observed along the beam within the crystal. Scattering centers caused by structural defects in Czochralski-grown BBO can be reduced by 95% by annealing at 920 degrees C. In the flux-grown BBO, centers actually increase by the same annealing because the process causes microcracks and/or secondary inclusions. It is shown that annealed Czochralski-grown BBO is superior to flux-grown BBO (annealed or as-grown) in terms of optical loss.
