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Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
Published on: July 12, 2016
Investigation of an electron string ion source with field emission cathode
R Becker1, F J Currell, E D Donets
1IAP, Universität Frankfurt, Max von Laue-Strasse 1, Frankfurt, Germany. rbecker@physik.uni-frankfurt.de
Electron string ion sources (ESIS) can be improved using Schottky field emitting cathodes for higher electron emission. This method may stabilize the electron plasma and prevent cathode damage, expanding ESIS operational parameters.
Area of Science:
- Atomic and Molecular Physics
- Plasma Physics
- Accelerator Technology
Background:
- Electron string ion sources (ESIS) offer reduced power consumption and simpler construction by eliminating collector cooling.
- Instabilities can occur during the transition to the electron string state, limiting operational parameters.
Purpose of the Study:
- To investigate the use of Schottky field emitting cathode tips for generating electron strings in an ESIS.
- To enhance electron emission and improve the stability of the electron plasma state.
- To develop methods for protecting field emission tips from backstreaming ions.
Main Methods:
- Utilizing Schottky field emitting cathode tips for electron generation.
- Operating at magnetic fields of several Tesla and electron energies of several keV.
- Implementing a technique to mitigate damage to the field emission tip from backstreaming ions.
Main Results:
- Schottky emitters provide electron emission orders of magnitude higher than Brillouin current density.
- This enhanced emission has the potential to stabilize the transition to the electron string state.
- A method to prevent damage to the field emission tip by backstreaming ions is presented.
Conclusions:
- Schottky field emitting cathodes are a promising approach for improving ESIS performance.
- This technology can lead to a wider range of operating parameters and increased stability.
- The developed method for tip protection is crucial for the long-term viability of this ESIS design.
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