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Interpreting voltage-sensitivity of gap junctions as a mechanism of cardiac memory
J Krishnan1, Gairik Sachdeva, V S Chakravarthy
1Biomedical Engineering Group, Department of Applied Mechanics, Indian Institute of Technology, Madras, India. jkrishnan@iitm.ernet.in
Abstract:
Memory in the nervous system is essentially a network effect, resulting from activity-dependent synaptic modification in a network of neurons. Like the nervous system, the heart is a network of cardiac cells electrically coupled by gap junctions. The heart too has memory, termed cardiac memory, whereby the effect of an external electrical activation persists long after the presentation of stimulus is terminated. We have earlier proposed that adaptation of gap junctions, as a function of membrane voltages of the cells that are coupled by the gap junctions, is related to cardiac memory [V.S. Chakravarthy, J. Ghosh, On Hebbian-like adaption in heart muscle: a proposal for "Cardiac Memory", Biol. Cybern. 76 (1997) 207, J. Krishnan, V.S. Chakravarthy, S. Radhakrishnan, On the role of gap junctions on cardiac memory effect, Comput. Cardiol. 32 (2005) 13]. Using the proposed mechanism, we demonstrate memory effect using computational models of interacting cell pairs. In this paper, we address the biological validity of the proposed mechanism of gap junctional adaptation. It is known from electrophysiology of gap junctions that the conductance of these channels adapts as a function of junctional voltage. At a first sight, this form of voltage dependence seems to be at variance with the form required by our mechanism. But we show, with the help of a theoretical model, that the proposed mechanism of voltage-dependent adaptation of gap junctions, is compatible with the known voltage-sensitivity of gap junctions observed in electrophysiological studies. Our analysis suggests a new significance of the voltage-sensitivity of gap junctions and its possible link to the phenomenon of cardiac memory.
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