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Updated: Jul 7, 2026

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
Published on: March 6, 2017
Carrier recombination under one-photon and two-photon excitation in GaN epilayers
S Miasojedovas1, M Butkus, S Jursenas
1Institute of Material Science and Applied Research, Sauletekio 9, III building, Vilnius LT 10222, Lithuania. saulius.miasojedovas@ff.vu.lt
Abstract:
Luminescence properties of 100-mum thick GaN epilayers grown by hydride vapor phase epitaxy (HVPE) over three different substrates: high-pressure grown n-type bulk GaN (HP-n-GaN), high-pressure bulk GaN doped with magnesium (HP-GaN:Mg), and free-standing HVPE lifted-off from sapphire (FS-HVPE-GaN), were compared by means of one-photon and two-photon excitations. The contribution of carrier capture to nonradiative traps was estimated by the analysis of luminescence transients with carrier diffusion taken into account. The estimated values of carrier lifetime of about 3ns and diffusion coefficient of 1cm(2)/s indicate the highest quality of GaN epilayers on FS-HVPE-GaN substrates.
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