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High-power diode-pumped AlGaAs surface-emitting laser.

M A Holm1, D Burns, P Cusumano

  • 1Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow G4 ONW, UK. m.a.holm@strath.ac.uk

Applied Optics
|March 8, 2008
PubMed
Summary

We developed an efficient diode-pumped semiconductor laser operating at 870 nm. This laser achieves 153 mW output power and self-tuning capabilities over a 15-nm spectral range.

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Area of Science:

  • Optics and Photonics
  • Semiconductor Devices
  • Quantum Electronics

Background:

  • Diode-pumped lasers offer efficient and compact solutions for various applications.
  • Surface-emitting semiconductor lasers are crucial for integrated photonic circuits.
  • Gallium arsenide (GaAs) quantum well structures are widely used in optoelectronic devices.

Purpose of the Study:

  • To develop and characterize an efficient diode-pumped surface-emitting semiconductor laser.
  • To achieve high output power and spectral tunability in a compact laser device.
  • To explore the performance of GaAs quantum wells in a Bragg reflector laser cavity.

Main Methods:

  • Fabrication of a semiconductor Bragg reflector stack with multiple GaAs quantum wells.
  • Integration of the structure within a conventional laser cavity.

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  • Characterization of laser output power, spectral properties, and tunability.

    • Main Results:

    • An efficient diode-pumped surface-emitting semiconductor laser operating at approximately 870 nm was developed.
    • Single transverse mode laser output power of 153 mW was achieved.
    • Self-tuning over a 15-nm spectral range was successfully demonstrated.

    Conclusions:

    • The developed laser demonstrates high efficiency and output power for its class.
    • The device shows promising self-tuning capabilities, expanding its potential applications.
    • This work contributes to advancements in diode-pumped semiconductor laser technology.