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Rashba effect in the graphene/ni(111) system.

Yu S Dedkov1, M Fonin, U Rüdiger

  • 1Institut für Festkörperphysik, Technische Universität Dresden, 01062 Dresden, Germany. dedkov@physik.phy.tu-dresden.de

Physical Review Letters
|March 21, 2008
PubMed
Summary

We observed that the electronic pi states in graphene on nickel show a large energy shift with magnetization reversal. This spin manipulation has implications for developing graphene-based spintronic devices.

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Area of Science:

  • Surface science
  • Condensed matter physics
  • Materials science

Background:

  • Epitaxial graphene on magnetic substrates is a promising platform for spintronics.
  • Understanding the interface electronic properties is crucial for device applications.

Purpose of the Study:

  • To investigate the electronic pi states of epitaxial graphene on Ni(111).
  • To explore the influence of Ni magnetization on graphene's electronic properties.
  • To elucidate the underlying physical mechanisms responsible for observed phenomena.

Main Methods:

  • Angle-resolved photoemission spectroscopy (ARPES) was employed.
  • High-quality epitaxial graphene layers on a Ni(111) surface were studied.
  • Magnetization reversal of the Ni film was performed.

Main Results:

  • A strong dependence of pi state binding energy on Ni magnetization reversal was observed.
  • An exceptionally large energy shift of up to 225 meV in the graphene pi band was detected for opposite magnetization directions.
  • This shift is attributed to the Rashba interaction at the graphene/Ni interface.

Conclusions:

  • The electron spin in graphene can be controllably manipulated via the Ni substrate's magnetization.
  • These findings highlight the potential of this system for advanced graphene-based spintronic devices.
  • The study demonstrates a significant interface effect influencing graphene's electronic and spin properties.