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Updated: Jul 6, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Zero-bias conductance in carbon nanotube quantum dots
Frithjof B Anders1, David E Logan, Martin R Galpin
1Institut für Theoretische Physik, Universität Bremen, P.O. Box 330 440, D-28334 Bremen, Germany.
Abstract:
We present numerical renormalization group calculations for the zero-bias conductance of quantum dots made from semiconducting carbon nanotubes. These explain and reproduce the thermal evolution of the conductance for different groups of orbitals, as the dot-lead tunnel coupling is varied and the system evolves from correlated Kondo behavior to more weakly correlated regimes. For integer fillings N=1, 2, 3 of an SU(4) model, we find universal scaling behavior of the conductance that is distinct from the standard SU(2) universal conductance, and concurs quantitatively with experiment. Our results also agree qualitatively with experimental differential conductance maps.
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