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Updated: Jul 6, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Activation energies for the formation and evaporation of vacancy clusters in silicon

D A Abdulmalik1, P G Coleman

  • 1Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom.

Physical Review Letters
|March 21, 2008
PubMed

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