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Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm
P A Hiskett1, G S Buller, A Y Loudon
1Department of Physics, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom. p.a.hiskett@hw.ac.uk
Applied Optics
|March 21, 2008
Abstract:
The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
