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Compact Lens-less Digital Holographic Microscope for MEMS Inspection and Characterization

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Published on: July 5, 2016

Extreme-ultraviolet lensless Fourier-transform holography.

S H Lee¹, P Naulleau, K A Goldberg

¹Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA. shlee@lbl.gov

|March 22, 2008

Summary

We developed a holographic aerial image monitoring technique for extreme-UV (EUV) lithography, achieving 100-nm resolution. This method enables precise imaging performance assessment of EUV optical systems.

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Lensfree On-chip Tomographic Microscopy Employing Multi-angle Illumination and Pixel Super-resolution

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Published on: August 16, 2012

Area of Science:

Optics and Photonics
Lithography Technology
Metrology

Background:

Extreme-UV (EUV) lithography is crucial for advanced semiconductor manufacturing.
Monitoring the coherent imaging performance of EUV optical systems is essential for yield.
Existing methods may lack the resolution or applicability for certain EUV lithography challenges.

Purpose of the Study:

To introduce and validate a novel holographic aerial image-recording technique.
To demonstrate 100-nm resolution monitoring of EUV lithographic optical systems.
To explore the application of this technique for mask-blank defect characterization.

Main Methods:

Lensless Fourier-transform holography using synchrotron-based illumination.
Implementation within an EUV phase-shifting point-diffraction interferometer.
Characterization of a 10x Schwarzschild objective and various object patterns.

Main Results:

Achieved 100-nm resolution holographic aerial image monitoring.
Demonstrated the technique's capability to assess coherent imaging performance.
Obtained good agreement between experimental results and simulations for a prototype EUV optic.

Conclusions:

The holographic aerial image-recording technique is a viable method for high-resolution monitoring in EUV lithography.
This technique can be applied to characterize EUV optical systems and mask-blank defects.
Further development could enhance defect detection and process control in EUV lithography.