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Focus measurement with a simple pattern design.

C Y Ku1, T F Lei, H K Lin

  • 1Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan.

Applied Optics
|March 22, 2008
PubMed
Summary
This summary is machine-generated.

A novel bar-in-bar mask pattern accurately determines the best focus position for advanced lithographic tools. This method translates focal errors into measurable shifts, ensuring high precision and efficiency in semiconductor manufacturing.

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Area of Science:

  • Semiconductor Manufacturing
  • Optical Lithography
  • Metrology

Background:

  • Advanced lithographic tools demand precise focus determination due to diminishing depth of focus.
  • Ensuring accuracy and efficiency in lithography is critical for semiconductor yield.

Purpose of the Study:

  • To introduce a novel bar-in-bar mask pattern for accurate focus determination in lithography.
  • To translate focal errors into measurable shifts for precise focus evaluation.

Main Methods:

  • A bar-in-bar pattern is drawn on a conventional chrome binary mask.
  • Overlay measurement tools quantify center-to-center shifts of the bars caused by defocus.
  • A second-order polynomial equation is fitted to the shift data against best focus.

Main Results:

  • Defocus creates a symmetrical center-to-center shift, accurately described by a polynomial fit.
  • Differentiating the fitted equation yields a reliable focus value with <0.05 micrometer maximum error.
  • The technique demonstrates potential for evaluating tool aberrations like tilt, field curvature, and astigmatism.

Conclusions:

  • The proposed bar-in-bar method offers an accurate and efficient solution for focus determination in advanced lithography.
  • This technique provides a reliable metrology approach for ensuring lithographic process control.
  • The method's versatility extends to evaluating other critical optical parameters of lithographic tools.