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Updated: Jul 6, 2026

Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples
Published on: June 19, 2018
Improved analyzer multilayers for aluminium and boron detection with x-ray fluorescence
P Ricardo1, J Wiesmann, C Nowak
1Institute of Materials Research, GKSS Research Centre, 21502 Geesthacht, Germany. paulo.ricardo@gkss.de
New multilayers significantly improve detection limits for aluminium and boron on silicon wafers using wavelength-dispersive x-ray fluorescence spectrometry. These advancements enhance material analysis accuracy for silicon wafer inspection.
Area of Science:
- Materials Science
- Analytical Chemistry
- Spectroscopy
Background:
- Accurate detection of elements like aluminium (Al) and boron (B) on silicon (Si) wafers is crucial for semiconductor manufacturing.
- Current wavelength-dispersive x-ray fluorescence (WDXRF) spectrometers rely on specific multilayer coatings for elemental analysis.
Purpose of the Study:
- To develop and evaluate novel multilayer coatings for enhanced detection limits of Al and B on Si wafers.
- To compare the performance of new multilayers against existing ones in WDXRF analysis.
Main Methods:
- Development of WSi(2)/Si, Ta/Si, and La/B(4)C multilayer structures.
- Testing these multilayers in WDXRF spectrometers for Al and B detection on Si wafers.
Main Results:
- WSi(2)/Si and Ta/Si multilayers achieved 42% and 60% better detection limits for Al, respectively, compared to W/Si.
- La/B(4)C multilayers improved the detection limit for B by approximately 28% compared to Mo/B(4)C.
Conclusions:
- The developed WSi(2)/Si, Ta/Si, and La/B(4)C multilayers offer superior performance for Al and B detection on Si wafers.
- These improved multilayers can enhance the sensitivity and accuracy of WDXRF analysis in semiconductor applications.
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