Related Experiment Video
Updated: Jul 6, 2026
10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
Simultaneous Mode Locking in a Diode-Pumped Passively Q-Switched Nd:YVO(4) Laser with a GaAs Saturable Absorber
Applied Optics
|March 28, 2008
Summary
Simultaneous mode locking and Q switching were achieved in a diode-pumped Nd:YVO(4)/GaAs laser. This laser system produced ~2.0 W average output power with a ~120 kHz Q-switched pulse repetition rate.
Area of Science:
- Optics and Photonics
- Laser Physics
- Materials Science
Background:
- Mode locking and Q switching are crucial techniques for generating ultrashort and high-energy laser pulses.
- Diode-pumped solid-state lasers offer advantages in efficiency and compactness for various applications.
- Semiconductor saturable absorber mirrors are effective for passive mode locking in lasers.
Purpose of the Study:
- To demonstrate simultaneous mode locking and Q switching in a diode-pumped Nd:YVO(4)/GaAs laser.
- To characterize the output performance, including average power and pulse repetition rates.
- To investigate the potential of this laser configuration for generating complex pulse structures.
Main Methods:
- Utilizing a diode-pumped Neodymium Yttrium Orthovanadate (Nd:YVO(4)) laser medium.
- Employing a Gallium Arsenide (GaAs) based semiconductor saturable absorber mirror for passive mode locking.
- Operating the laser system in a configuration that enables simultaneous Q switching and mode locking.
Main Results:
- Achieved simultaneous mode locking and Q switching with an average output power of approximately 2.0 W at 10.6 W absorbed pump power.
- Observed a Q-switched pulse repetition rate of around 120 kHz.
- Measured a mode-locked pulse repetition rate of approximately 148 MHz within each Q-switched pulse, with an estimated average pulse duration of ~100 ps.
Conclusions:
- The diode-pumped Nd:YVO(4)/GaAs laser successfully demonstrated simultaneous mode locking and Q switching.
- The laser system exhibits promising performance for generating high-repetition-rate, short-duration pulses within a Q-switched envelope.
- This approach offers a viable pathway for developing advanced pulsed laser sources for scientific and industrial applications.
More Related Videos
Related Concept Videos
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
01:20MOSFET: Depletion Mode
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...